SI6433BDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Power Dissipation-Max :

1.05W Ta

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Resistance :

40mOhm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

45 ns

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-609 Code :

e3

Threshold Voltage :

-1.5V

Power Dissipation :

1.05W

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Number of Elements :

1

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain Current-Max (Abs) (ID) :

4A

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.8A, 4.5V

Drain to Source Breakdown Voltage :

12V

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Number of Terminations :

8

Rise Time :

60ns

Fall Time (Typ) :

60 ns

Nominal Vgs :

-1.5 V

FET Type :

P-Channel

Published :

2016

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

-4.8A