SI6423DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Power Dissipation :

1.05W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-12V

Packaging :

Tape and Reel (TR)

Height :

1mm

Drain to Source Voltage (Vdss) :

12V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

75 ns

Resistance :

8.5mOhm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 9.5A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Turn On Delay Time :

50 ns

Series :

TrenchFET®

Width :

4.4mm

Published :

2015

Turn-Off Delay Time :

270 ns

Number of Channels :

1

Vgs(th) (Max) @ Id :

800mV @ 400μA

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Factory Lead Time :

14 Weeks

Weight :

157.991892mg

Element Configuration :

Single

Number of Terminations :

8

Nominal Vgs :

-400 mV

Continuous Drain Current (ID) :

-9.5A

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Length :

3mm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±8V

Terminal Form :

Gull wing

Number of Elements :

1

Power Dissipation-Max :

1.05W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mount :

Surface Mount

Transistor Element Material :

SILICON

Rise Time :

75ns

REACH SVHC :

Unknown