SI6410DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

7.8A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

14m Ω @ 7.8A, 10V

FET Type :

N-Channel

Width :

3.0988mm

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Turn-Off Delay Time :

70 ns

Number of Elements :

1

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

10 ns

Vgs (Max) :

±20V

Number of Terminations :

8

Power Dissipation-Max :

1.5W Ta

Pulsed Drain Current-Max (IDM) :

30A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Element Configuration :

Single

JESD-609 Code :

e3

Height :

1.0414mm

Published :

2016

Radiation Hardening :

No

Length :

4.4958mm

Transistor Element Material :

SILICON

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Resistance :

14mOhm

Terminal Form :

Gull wing

Number of Pins :

8