SI6423DQ-T1-GE3

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Mfr.Part #
SI6423DQ-T1-GE3
Manufacturer
Vishay
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 12V 8.2A 8TSSOP
Stock
28,456
In Stock :
28,456

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
Radiation Hardening :
No
Turn-Off Delay Time :
270 ns
Mount :
Surface Mount
Terminal Form :
Gull wing
Series :
TrenchFET®
Number of Terminations :
8
Length :
3mm
Number of Pins :
8
Terminal Finish :
Matte Tin (Sn)
Lead Free :
Lead Free
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
8.2A Ta
REACH SVHC :
Unknown
Transistor Application :
SWITCHING
Vgs (Max) :
±8V
Continuous Drain Current (ID) :
-9.5A
Resistance :
8.5mOhm
Transistor Element Material :
SILICON
Published :
2015
Rise Time :
75ns
Turn On Delay Time :
50 ns
Gate to Source Voltage (Vgs) :
8V
Fall Time (Typ) :
75 ns
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 5V
Factory Lead Time :
14 Weeks
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Height :
1mm
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
800mV @ 400μA
JESD-609 Code :
e3
Power Dissipation :
1.05W
Power Dissipation-Max :
1.05W Ta
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 9.5A, 4.5V
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Weight :
157.991892mg
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Threshold Voltage :
-800mV
Pin Count :
8
Width :
4.4mm
Drain to Source Voltage (Vdss) :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SI6423DQ-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI6423DQ-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-TSSOP (0.173, 4.40mm Width), Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, SI6423DQ-T1-GE3 pinout, SI6423DQ-T1-GE3 datasheet PDF, SI6423DQ-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI6423DQ-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI6423DQ-T1-GE3


P-Channel Tape & Reel (TR) 8.5m Ω @ 9.5A, 4.5V ±8V 110nC @ 5V 12V 8-TSSOP (0.173, 4.40mm Width)

SI6423DQ-T1-GE3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9.5A amps.It is [270 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -800mV.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

SI6423DQ-T1-GE3 Features


a continuous drain current (ID) of -9.5A
the turn-off delay time is 270 ns
a threshold voltage of -800mV
a 12V drain to source voltage (Vdss)


SI6423DQ-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI6423DQ-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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