SI6433BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Element Configuration :

Single

Turn On Delay Time :

45 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs (Max) :

±8V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

1.05W Ta

Continuous Drain Current (ID) :

-4.8A

Number of Pins :

8

Drain to Source Voltage (Vdss) :

12V

Lead Free :

Lead Free

Published :

2011

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.8A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Rise Time :

60ns

FET Type :

P-Channel

Nominal Vgs :

-600 mV

Terminal Position :

Dual

Pbfree Code :

yes

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

4A

Resistance :

40mOhm

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Mounting Type :

Surface Mount

Turn-Off Delay Time :

70 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON