SI6404DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-TSSOP

Current - Continuous Drain (Id) @ 25°C :

8.6A Ta

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Nominal Vgs :

600 mV

Fall Time (Typ) :

35 ns

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

9mOhm @ 11A, 10V

Power Dissipation-Max :

1.08W Ta

FET Type :

N-Channel

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchFET®

Min Operating Temperature :

-55°C

Turn On Delay Time :

35 ns

Number of Elements :

1

Number of Channels :

1

Power Dissipation :

1.08W

Mount :

Surface Mount

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

8.6A

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.4mm

Vgs(th) (Max) @ Id :

600mV @ 250μA

Rise Time :

35ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Weight :

157.991892mg

Height :

1mm

Published :

2011

Vgs (Max) :

±12V

Rds On Max :

9 mΩ

Drain to Source Resistance :

9mOhm

Mounting Type :

Surface Mount