SI6410DQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Pin Count :

8

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Number of Elements :

1

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Position :

Dual

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Continuous Drain Current (ID) :

7.8A

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

1.5W Ta

Rds On (Max) @ Id, Vgs :

14m Ω @ 7.8A, 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Terminal Finish :

MATTE TIN

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

70 ns

Transistor Element Material :

SILICON

Published :

2016

Element Configuration :

Single

Power Dissipation :

1.5W