SI6469DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

30A

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Transistor Element Material :

SILICON

FET Type :

P-Channel

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Power Dissipation :

1.5W

Rise Time :

30ns

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

8V

Published :

2016

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Element Configuration :

Single

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

85 ns

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 4.5V

Mount :

Surface Mount

Vgs (Max) :

±8V

Number of Terminations :

8

Fall Time (Typ) :

30 ns

Mounting Type :

Surface Mount

Series :

TrenchFET®

ECCN Code :

EAR99

Pin Count :

8

Pbfree Code :

yes

Continuous Drain Current (ID) :

6A

Terminal Form :

Gull wing

Power Dissipation-Max :

1.5W Ta

Drain-source On Resistance-Max :

0.031Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6A