SI6467BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

45 ns

Published :

2016

Drain to Source Breakdown Voltage :

12V

Number of Pins :

8

Number of Elements :

1

Terminal Form :

Gull wing

Fall Time (Typ) :

85 ns

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Power Dissipation :

1.05W

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.05W

Pin Count :

8

Pbfree Code :

yes

Rise Time :

85ns

Threshold Voltage :

450mV

Min Operating Temperature :

-55°C

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

220 ns

Resistance :

12.5mOhm

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 8A, 4.5V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

FET Type :

P-Channel

Packaging :

Cut Tape (CT)

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Number of Terminations :

8

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Max Operating Temperature :

150°C

Terminal Position :

Dual

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

850mV @ 450μA

Continuous Drain Current (ID) :

6.8A