SI6466ADQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Element Configuration :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Resistance :

14mOhm

Power Dissipation :

1.05W

Series :

TrenchFET®

Number of Terminations :

8

ECCN Code :

EAR99

Number of Pins :

8

Number of Elements :

1

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Published :

2009

Pin Count :

8

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

34 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Rds On (Max) @ Id, Vgs :

14m Ω @ 8.1A, 4.5V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Rise Time :

34ns

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

6.8A

Terminal Form :

Gull wing

Turn On Delay Time :

27 ns

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Power Dissipation-Max :

1.05W Ta

Turn-Off Delay Time :

76 ns

Operating Mode :

ENHANCEMENT MODE