SI6465DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Turn On Delay Time :

30 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation-Max :

1.5W Ta

Mount :

Surface Mount

Pin Count :

8

Continuous Drain Current (ID) :

8.8A

Power Dissipation :

1.5W

Number of Terminations :

8

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Weight :

157.991892mg

Element Configuration :

Single

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Height :

1mm

Packaging :

Tape and Reel (TR)

Width :

4.4mm

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

JESD-609 Code :

e3

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Rise Time :

60ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

Published :

2013

Turn-Off Delay Time :

210 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 8.8A, 4.5V

Pulsed Drain Current-Max (IDM) :

30A

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3mm

Drain to Source Breakdown Voltage :

-8V

Terminal Finish :

Matte Tin (Sn)