SI6463BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Rise Time :

40ns

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Height :

1.0414mm

Terminal Finish :

Matte Tin (Sn)

Max Operating Temperature :

150°C

Drain Current-Max (Abs) (ID) :

6.2A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Series :

TrenchFET®

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

40 ns

Turn-Off Delay Time :

190 ns

Max Power Dissipation :

1.05W

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

15m Ω @ 7.4A, 4.5V

Continuous Drain Current (ID) :

-7.4A

Mounting Type :

Surface Mount

Resistance :

15mOhm

Length :

4.4958mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

800mV @ 250μA

Pin Count :

8

Turn On Delay Time :

35 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Power Dissipation :

1.05W

Drain to Source Breakdown Voltage :

-20V

Lead Free :

Lead Free

Width :

3.0988mm

Number of Pins :

8

FET Type :

P-Channel

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes