SI6459BDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

15ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-60V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Fall Time (Typ) :

15 ns

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Mount :

Surface Mount

Weight :

157.991892mg

Number of Elements :

1

Continuous Drain Current (ID) :

-2.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

115mOhm

Rds On Max :

115 mΩ

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1W

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Width :

4.4mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

115mOhm @ 2.7A, 10V

Power Dissipation-Max :

1W Ta

Length :

3mm

Height :

1mm

Supplier Device Package :

8-TSSOP

Turn On Delay Time :

10 ns

Number of Channels :

1

Turn-Off Delay Time :

50 ns

Series :

TrenchFET®

Element Configuration :

Single

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Drain to Source Voltage (Vdss) :

60V