SI6459BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

FET Type :

P-Channel

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Fall Time (Typ) :

15 ns

Continuous Drain Current (ID) :

2.2A

Power Dissipation :

1W

Peak Reflow Temperature (Cel) :

260

Weight :

157.991892mg

Published :

2016

Power Dissipation-Max :

1W Ta

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Series :

TrenchFET®

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

50 ns

Terminal Form :

Gull wing

Pin Count :

8

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

15ns

Turn On Delay Time :

10 ns

Pbfree Code :

yes

Width :

4.4mm

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.7A, 10V

Gate to Source Voltage (Vgs) :

20V

Length :

3mm

Height :

1mm

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta