SI6443DQ-T1-E3

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Mfr.Part #
SI6443DQ-T1-E3
Manufacturer
Vishay
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 7.3A 8TSSOP
Stock
4,213
In Stock :
4,213

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55°C
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Continuous Drain Current (ID) :
7.3A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Supplier Device Package :
8-TSSOP
Turn-Off Delay Time :
115 ns
Current - Continuous Drain (Id) @ 25°C :
7.3A Ta
Resistance :
12mOhm
Number of Pins :
8
Rise Time :
21ns
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Published :
2009
Rds On Max :
12 mΩ
FET Type :
P-Channel
Drain to Source Resistance :
12mOhm
Vgs (Max) :
±20V
Power Dissipation-Max :
1.05W Ta
Series :
TrenchFET®
Drain to Source Breakdown Voltage :
30V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
3V @ 250µA
Rds On (Max) @ Id, Vgs :
12mOhm @ 8.8A, 10V
Gate to Source Voltage (Vgs) :
20V
Package / Case :
8-TSSOP (0.173, 4.40mm Width)
Drain to Source Voltage (Vdss) :
30V
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 5V
Packaging :
Tape and Reel (TR)
Power Dissipation :
1.5W
Fall Time (Typ) :
68 ns
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150°C
Datasheets
SI6443DQ-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI6443DQ-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-TSSOP (0.173, 4.40mm Width), SI6443DQ-T1-E3 pinout, SI6443DQ-T1-E3 datasheet PDF, SI6443DQ-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI6443DQ-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI6443DQ-T1-E3


P-Channel Tape & Reel (TR) 12mOhm @ 8.8A, 10V ±20V 60nC @ 5V 30V 8-TSSOP (0.173, 4.40mm Width)

SI6443DQ-T1-E3 Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 115 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 12mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI6443DQ-T1-E3 Features


a continuous drain current (ID) of 7.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 115 ns
single MOSFETs transistor is 12mOhm
a 30V drain to source voltage (Vdss)


SI6443DQ-T1-E3 Applications


There are a lot of Vishay Siliconix
SI6443DQ-T1-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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