SI6443DQ-T1-E3
- Mfr.Part #
- SI6443DQ-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 7.3A 8TSSOP
- Stock
- 4,213
- In Stock :
- 4,213
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 7.3A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- 8-TSSOP
- Turn-Off Delay Time :
- 115 ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Ta
- Resistance :
- 12mOhm
- Number of Pins :
- 8
- Rise Time :
- 21ns
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Rds On Max :
- 12 mΩ
- FET Type :
- P-Channel
- Drain to Source Resistance :
- 12mOhm
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.05W Ta
- Series :
- TrenchFET®
- Drain to Source Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 8.8A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.5W
- Fall Time (Typ) :
- 68 ns
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Datasheets
- SI6443DQ-T1-E3

P-Channel Tape & Reel (TR) 12mOhm @ 8.8A, 10V ±20V 60nC @ 5V 30V 8-TSSOP (0.173, 4.40mm Width)
SI6443DQ-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 115 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 12mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI6443DQ-T1-E3 Features
a continuous drain current (ID) of 7.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 115 ns
single MOSFETs transistor is 12mOhm
a 30V drain to source voltage (Vdss)
SI6443DQ-T1-E3 Applications
There are a lot of Vishay Siliconix
SI6443DQ-T1-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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