SI6435ADQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

12 ns

Drain to Source Voltage (Vdss) :

30V

Packaging :

Cut Tape (CT)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-1V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Radiation Hardening :

No

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4.7A

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.5A, 10V

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Dual Supply Voltage :

-30V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

-30V

Published :

2016

Power Dissipation :

1.05W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

30mOhm

Pin Count :

8

Width :

3.0988mm

Mounting Type :

Surface Mount

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Min Operating Temperature :

-55°C

Height :

1.0414mm

ECCN Code :

EAR99

Number of Elements :

1

Terminal Form :

Gull wing

Series :

TrenchFET®

Nominal Vgs :

-1 V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Max Power Dissipation :

1.5W

Length :

4.4958mm

Turn-Off Delay Time :

42 ns

Termination :

SMD/SMT

REACH SVHC :

No SVHC