SI5858DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

65ns

Supplier Device Package :

PowerPAK® ChipFet Dual

Length :

3mm

Mount :

Surface Mount

Turn On Delay Time :

20 ns

Drain to Source Resistance :

39mOhm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

39mOhm @ 4.4A, 4.5V

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

40 ns

Series :

LITTLE FOOT®

Height :

750μm

Rds On Max :

39 mΩ

Input Capacitance :

520pF

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® ChipFET™ Dual

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Published :

2017

Continuous Drain Current (ID) :

6A

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

2.3W Ta 8.3W Tc

Number of Channels :

1

Vgs (Max) :

±8V

FET Feature :

Schottky Diode (Isolated)

Drain to Source Breakdown Voltage :

20V

Width :

1.9mm