SI5853CDC-T1-E3
- Mfr.Part #
- SI5853CDC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 1206-8
- Stock
- 16,906
- In Stock :
- 16,906
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 104m Ω @ 2.5A, 4.5V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 1.5W Ta 3.1W Tc
- Series :
- LITTLE FOOT®
- Continuous Drain Current (ID) :
- -4A
- Number of Terminations :
- 8
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 8V
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Finish :
- MATTE TIN
- Package / Case :
- 8-SMD, Flat Lead
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- C BEND
- Drain Current-Max (Abs) (ID) :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Drain to Source Voltage (Vdss) :
- 20V
- DS Breakdown Voltage-Min :
- 20V
- Resistance :
- 104mOhm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±8V
- FET Feature :
- Schottky Diode (Isolated)
- FET Type :
- P-Channel
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Published :
- 2010
- Fall Time (Typ) :
- 15 ns
- Turn On Delay Time :
- 5 ns
- Datasheets
- SI5853CDC-T1-E3
P-Channel Tape & Reel (TR) 104m Ω @ 2.5A, 4.5V ±8V 350pF @ 10V 11nC @ 8V 20V 8-SMD, Flat Lead
SI5853CDC-T1-E3 Overview
A device's maximum input capacitance is 350pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
SI5853CDC-T1-E3 Features
a continuous drain current (ID) of -4A
the turn-off delay time is 20 ns
a 20V drain to source voltage (Vdss)
SI5853CDC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5853CDC-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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