SI5856DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

FET Feature :

Schottky Diode (Isolated)

Published :

2012

Turn-Off Delay Time :

30 ns

Package / Case :

8-SMD, Flat Lead

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.1W Ta

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Mount :

Surface Mount

Fall Time (Typ) :

36 ns

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Terminal Finish :

MATTE TIN

Additional Feature :

ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

4.4A

Continuous Drain Current (ID) :

5.9A

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.04Ohm

Series :

TrenchFET®

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.1W

Pin Count :

8

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.4A, 4.5V

Drain to Source Breakdown Voltage :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Number of Terminations :

8

Transistor Application :

SWITCHING

Terminal Form :

C BEND

ECCN Code :

EAR99

Rise Time :

36ns

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V