SI5855DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

ECCN Code :

EAR99

Power Dissipation-Max :

1.1W Ta

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.7A

FET Feature :

Schottky Diode (Isolated)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-450 mV

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Number of Pins :

8

FET Type :

P-Channel

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns

Power Dissipation :

1.1W

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.7A, 4.5V

Turn-Off Delay Time :

30 ns

Radiation Hardening :

No

Rise Time :

30ns

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Form :

C BEND

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

REACH SVHC :

Unknown

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SMD, Flat Lead

Resistance :

110mOhm

Vgs (Max) :

±8V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Packaging :

Tape and Reel (TR)