SI5853DDC-T1-E3
- Mfr.Part #
- SI5853DDC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 1206-8
- Stock
- 47,050
- In Stock :
- 47,050
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Published :
- 2013
- Rise Time :
- 17ns
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±8V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 21 ns
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 2.9A
- Terminal Form :
- C BEND
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 10V
- Number of Terminations :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 105mOhm
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 2.9A, 4.5V
- Weight :
- 84.99187mg
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 1.3W Ta 3.1W Tc
- Package / Case :
- 8-SMD, Flat Lead
- Terminal Finish :
- PURE MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 8V
- FET Feature :
- Schottky Diode (Isolated)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Height :
- 1.1mm
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 8V
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- DS Breakdown Voltage-Min :
- 20V
- Turn On Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation :
- 1.2W
- Fall Time (Typ) :
- 17 ns
- Mount :
- Surface Mount
- Series :
- LITTLE FOOT®
- Width :
- 1.65mm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Length :
- 3.05mm
- Drain to Source Voltage (Vdss) :
- 20V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Datasheets
- SI5853DDC-T1-E3
P-Channel Tape & Reel (TR) 105m Ω @ 2.9A, 4.5V ±8V 320pF @ 10V 12nC @ 8V 20V 8-SMD, Flat Lead
SI5853DDC-T1-E3 Overview
A device's maximal input capacitance is 320pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.9A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
SI5853DDC-T1-E3 Features
a continuous drain current (ID) of 2.9A
the turn-off delay time is 21 ns
a 20V drain to source voltage (Vdss)
SI5853DDC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5853DDC-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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