SI5853DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.1W Ta

Vgs (Max) :

±8V

Turn On Delay Time :

12 ns

Rds On Max :

110 mΩ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Turn-Off Delay Time :

30 ns

Mount :

Surface Mount

Package / Case :

8-SMD, Flat Lead

FET Type :

P-Channel

Max Operating Temperature :

150°C

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

110mOhm @ 2.7A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Min Operating Temperature :

-55°C

Fall Time (Typ) :

30 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Published :

2016

Drain to Source Resistance :

110mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

30ns

REACH SVHC :

Unknown

Nominal Vgs :

-1 V

Supplier Device Package :

1206-8 ChipFET™

Continuous Drain Current (ID) :

-3.6A

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Feature :

Schottky Diode (Isolated)

Power Dissipation :

1.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

LITTLE FOOT®

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Number of Pins :

8