SI5857DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

1

Rds On Max :

58 mΩ

Min Operating Temperature :

-55°C

Published :

2017

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

58mOhm @ 3.6A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Input Capacitance :

480pF

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

25 ns

Supplier Device Package :

PowerPAK® ChipFet Dual

Resistance :

58mOhm

Height :

750μm

Width :

1.9mm

Series :

LITTLE FOOT®

Gate to Source Voltage (Vgs) :

12V

Length :

3mm

Power Dissipation-Max :

2.3W Ta 10.4W Tc

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Turn On Delay Time :

5 ns

Rise Time :

15ns

Drain to Source Resistance :

58mOhm

Continuous Drain Current (ID) :

6A

Package / Case :

PowerPAK® ChipFET™ Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)