SI5855CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.65mm

Package / Case :

8-SMD, Flat Lead

Turn-Off Delay Time :

22 ns

Fall Time (Typ) :

34 ns

Rise Time :

34ns

Power Dissipation :

1.9W

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Published :

2013

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.3W Ta 2.8W Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-3.7A

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Number of Elements :

1

Series :

LITTLE FOOT®

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 5V

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

Length :

3.05mm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

P-Channel

FET Feature :

Schottky Diode (Isolated)

Weight :

84.99187mg

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Gate to Source Voltage (Vgs) :

8V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-20V

Height :

1.1mm

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

276pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2.5A

Terminal Form :

C BEND

Number of Channels :

1

Transistor Application :

SWITCHING

Terminal Finish :

PURE MATTE TIN

Rds On (Max) @ Id, Vgs :

144m Ω @ 2.5A, 4.5V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3