SI4973DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Fall Time (Typ) :

90 ns

Pin Count :

8

Mounting Type :

Surface Mount

Number of Elements :

2

Number of Terminations :

8

Power Dissipation :

1.1W

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Base Part Number :

SI4973

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JESD-609 Code :

e3

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Resistance :

23mOhm

Turn-Off Delay Time :

115 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.1W

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.6A, 10V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Turn On Delay Time :

10 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Published :

2014

Rise Time :

15ns

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

5.8A

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Series :

TrenchFET®

FET Type :

2 P-Channel (Dual)