SI4904DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

186.993455mg

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

16V

RoHS Status :

ROHS3 Compliant

Published :

2011

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Rise Time :

117ns

Max Power Dissipation :

2W

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Fall Time (Typ) :

19 ns

Turn On Delay Time :

88 ns

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

8A

Number of Pins :

8

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Continuous Drain Current (ID) :

8A

Turn-Off Delay Time :

62 ns

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

JESD-609 Code :

e3

FET Feature :

Standard

Base Part Number :

SI4904

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 20V

Pin Count :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Resistance :

16mOhm

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

16m Ω @ 5A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Power - Max :

3.25W

Length :

5mm

Height :

1.5mm

Lead Free :

Lead Free

Mount :

Surface Mount

Element Configuration :

Dual

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Width :

4mm

Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR