SI4913DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

-1V

Turn-Off Delay Time :

350 ns

Pbfree Code :

yes

Resistance :

15mOhm

Published :

2009

Rise Time :

42ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Fall Time (Typ) :

42 ns

Drain Current-Max (Abs) (ID) :

7.1A

FET Type :

2 P-Channel (Dual)

Pin Count :

8

Element Configuration :

Dual

Terminal Form :

Gull wing

Series :

TrenchFET®

Max Power Dissipation :

1.1W

Base Part Number :

SI4913

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9.4A

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Pins :

8

Gate to Source Voltage (Vgs) :

8V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

-1 V

Current - Continuous Drain (Id) @ 25°C :

7.1A

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

1.1W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

Unknown

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 500µA

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

32 ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant