SI4906DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On Max :

39 mΩ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.6A

Input Capacitance :

625pF

Drain to Source Voltage (Vdss) :

40V

Turn-Off Delay Time :

17 ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Published :

2017

Gate to Source Voltage (Vgs) :

16V

Width :

4mm

Mount :

Surface Mount

Height :

1.5mm

Length :

5mm

Rise Time :

85ns

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Power - Max :

3.1W

Continuous Drain Current (ID) :

6.6A

Max Operating Temperature :

150°C

Series :

TrenchFET®

Radiation Hardening :

No

Resistance :

39mOhm

Max Power Dissipation :

2W

FET Feature :

Standard

Fall Time (Typ) :

7 ns

Drain to Source Breakdown Voltage :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Operating Temperature :

-50°C

Element Configuration :

Dual

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

39mOhm @ 5A, 10V

Supplier Device Package :

8-SO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI4906

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 20V

Turn On Delay Time :

9 ns

Number of Elements :

2

Drain to Source Resistance :

39mOhm