SI4908DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Rise Time :

95ns

Series :

TrenchFET®

Length :

5mm

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Feature :

Standard

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

1.85W

Number of Channels :

2

Input Capacitance (Ciss) (Max) @ Vds :

355pF @ 20V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2015

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

31 ns

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

74 ns

Max Power Dissipation :

1.85W

Power - Max :

2.75W

Fall Time (Typ) :

33 ns

Width :

4mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Weight :

186.993455mg

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.1A, 10V

Element Configuration :

Dual

REACH SVHC :

No SVHC

Threshold Voltage :

2.2V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Base Part Number :

SI4908

Height :

1.5mm

ECCN Code :

EAR99