SI4946BEY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

41mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

41m Ω @ 5.3A, 10V

Terminal Finish :

MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

5.3A

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

SI4946

Rise Time :

12ns

Max Power Dissipation :

3.7W

Lead Free :

Lead Free

Pin Count :

8

Power Dissipation :

2.4W

Pulsed Drain Current-Max (IDM) :

30A

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

60V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 30V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Turn-Off Delay Time :

25 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Published :

2013

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6.5A

FET Feature :

Logic Level Gate

Turn On Delay Time :

10 ns

Fall Time (Typ) :

10 ns

Number of Elements :

2

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Dual

Number of Pins :

8

Length :

5mm

Gate to Source Voltage (Vgs) :

20V

Weight :

506.605978mg

Threshold Voltage :

2.4V

JESD-609 Code :

e3

Width :

4mm

Height :

1.55mm

Operating Temperature :

-55°C~175°C TJ