SI4944DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 12.2A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

REACH SVHC :

Unknown

Series :

TrenchFET®

Voltage :

30V

Terminal Form :

Gull wing

Max Power Dissipation :

1.3W

Threshold Voltage :

3V

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

12.2A

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Rise Time :

10ns

Base Part Number :

SI4944

Nominal Vgs :

3 V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

9.3A

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

10 ns

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Resistance :

9.5MOhm

JESD-609 Code :

e3

Current :

75A

Pbfree Code :

yes

Turn-Off Delay Time :

40 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

1.3W

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Height :

1.75mm

Number of Channels :

2

Element Configuration :

Dual