SI4936BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.9A, 10V

Continuous Drain Current (ID) :

6.9A

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

5 ns

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2011

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 15V

Fall Time (Typ) :

10 ns

REACH SVHC :

Unknown

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Threshold Voltage :

3V

FET Feature :

Logic Level Gate

Weight :

506.605978mg

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.035Ohm

Number of Elements :

2

Number of Terminations :

8

Rise Time :

25ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

12 ns

Base Part Number :

SI4936

Mounting Type :

Surface Mount

Max Power Dissipation :

2.8W

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Series :

TrenchFET®

Terminal Finish :

Pure Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V