SI4923DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.1W

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.021Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Transistor Application :

SWITCHING

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.3A, 10V

Number of Pins :

8

Transistor Element Material :

SILICON

Number of Elements :

2

Turn-Off Delay Time :

135 ns

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Rise Time :

10ns

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Height :

1.5494mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Continuous Drain Current (ID) :

6.2A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Max Power Dissipation :

1.1W

Length :

4.9784mm

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)