SI3951DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

-1.5V

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Element Configuration :

Dual

Power - Max :

2W

Resistance :

115mOhm

Min Operating Temperature :

-55°C

Input Capacitance :

250pF

Rise Time :

30ns

Supplier Device Package :

6-TSOP

Fall Time (Typ) :

30 ns

Max Operating Temperature :

150°C

Nominal Vgs :

-1.5 V

Drain to Source Breakdown Voltage :

20V

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 5V

Power Dissipation :

1.14W

Turn-Off Delay Time :

32 ns

Mount :

Surface Mount

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

115 mΩ

Current - Continuous Drain (Id) @ 25°C :

2.7A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Mounting Type :

Surface Mount

Drain to Source Resistance :

115mOhm

Base Part Number :

SI3951

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.14W

Rds On (Max) @ Id, Vgs :

115mOhm @ 2.5A, 4.5V

Continuous Drain Current (ID) :

-2.7A

REACH SVHC :

Unknown