SI3909DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Turn-Off Delay Time :

19 ns

ECCN Code :

EAR99

Element Configuration :

Dual

Pin Count :

6

Drain to Source Breakdown Voltage :

20V

Qualification Status :

Not Qualified

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

34 ns

Vgs(th) (Max) @ Id :

500mV @ 250μA (Min)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Number of Terminations :

6

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Rise Time :

34ns

Power Dissipation :

1.15W

Drain-source On Resistance-Max :

0.2Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

JESD-30 Code :

R-PDSO-G6

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.8A

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

Published :

2005

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.8A, 4.5V

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.15W