SI3981DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

-1.1 V

Drain to Source Breakdown Voltage :

20V

Published :

2014

Max Power Dissipation :

800mW

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rise Time :

50ns

Drain-source On Resistance-Max :

0.185Ohm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Turn On Delay Time :

30 ns

Threshold Voltage :

-1.1V

Turn-Off Delay Time :

45 ns

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.9A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.6A

Fall Time (Typ) :

21 ns

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Logic Level Gate

Number of Terminations :

6

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

800mW

ECCN Code :

EAR99

Number of Pins :

6

REACH SVHC :

Unknown

Element Configuration :

Dual

Base Part Number :

SI3981

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Continuous Drain Current (ID) :

-1.9A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Pin Count :

6