SI3905DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

8V

Power - Max :

1.15W

Turn-Off Delay Time :

28 ns

Drain to Source Resistance :

125mOhm

Fall Time (Typ) :

47 ns

Continuous Drain Current (ID) :

2.5A

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.15W

Drain to Source Breakdown Voltage :

8V

Mounting Type :

Surface Mount

Published :

2016

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Max Power Dissipation :

1.15W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Rds On Max :

125 mΩ

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.5A, 4.5V

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Series :

TrenchFET®

Supplier Device Package :

6-TSOP

FET Feature :

Logic Level Gate

Max Operating Temperature :

150°C

Number of Pins :

6

Gate to Source Voltage (Vgs) :

8V

Rise Time :

47ns

Element Configuration :

Dual