SI3948DV-T1-E3
- Mfr.Part #
- SI3948DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 6-TSOP
- Stock
- 22,160
- In Stock :
- 22,160
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power Dissipation :
- 1.15W
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Rise Time :
- 9ns
- Number of Terminations :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 2.5A, 10V
- Drain-source On Resistance-Max :
- 0.105Ohm
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 3.2nC @ 5V
- Fall Time (Typ) :
- 9 ns
- Number of Pins :
- 6
- Element Configuration :
- Dual
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Width :
- 1.65mm
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Base Part Number :
- SI3948
- Published :
- 2016
- Turn-Off Delay Time :
- 13 ns
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 2.5A
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 2
- Lead Free :
- Lead Free
- FET Feature :
- Logic Level Gate
- Height :
- 1mm
- Max Power Dissipation :
- 1.15W
- Series :
- TrenchFET®
- Length :
- 3.05mm
- FET Type :
- 2 N-Channel (Dual)
- Weight :
- 19.986414mg
- Turn On Delay Time :
- 7 ns
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- SI3948DV-T1-E3
SI3948DV-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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