SI3879DV-T1-E3

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Mfr.Part #
SI3879DV-T1-E3
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 20V 5A 6TSOP
Stock
1,033
In Stock :
1,033

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
6
Element Configuration :
Single
Input Capacitance :
480pF
Drain to Source Voltage (Vdss) :
20V
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Drain to Source Breakdown Voltage :
20V
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±12V
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
70mOhm @ 3.5A, 4.5V
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
12V
Continuous Drain Current (ID) :
5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2W
Max Operating Temperature :
150°C
Rds On Max :
70 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Rise Time :
80ns
Fall Time (Typ) :
10 ns
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Min Operating Temperature :
-55°C
Power Dissipation-Max :
2W Ta 3.3W Tc
Published :
2013
Drain to Source Resistance :
70mOhm
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Series :
LITTLE FOOT®
Turn-Off Delay Time :
20 ns
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
6-TSOP
Datasheets
SI3879DV-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI3879DV-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI3879DV-T1-E3 pinout, SI3879DV-T1-E3 datasheet PDF, SI3879DV-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI3879DV-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI3879DV-T1-E3


P-Channel Tape & Reel (TR) 70mOhm @ 3.5A, 4.5V ±12V 480pF @ 10V 14.5nC @ 10V 20V SOT-23-6 Thin, TSOT-23-6

SI3879DV-T1-E3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 480pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 70mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

SI3879DV-T1-E3 Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 70mOhm
a 20V drain to source voltage (Vdss)


SI3879DV-T1-E3 Applications


There are a lot of Vishay Siliconix
SI3879DV-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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