SI3879DV-T1-E3
- Mfr.Part #
- SI3879DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5A 6TSOP
- Stock
- 1,033
- In Stock :
- 1,033
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 6
- Element Configuration :
- Single
- Input Capacitance :
- 480pF
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- Vgs (Max) :
- ±12V
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 70mOhm @ 3.5A, 4.5V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Continuous Drain Current (ID) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 70 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rise Time :
- 80ns
- Fall Time (Typ) :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 2W Ta 3.3W Tc
- Published :
- 2013
- Drain to Source Resistance :
- 70mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Series :
- LITTLE FOOT®
- Turn-Off Delay Time :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- 6-TSOP
- Datasheets
- SI3879DV-T1-E3
P-Channel Tape & Reel (TR) 70mOhm @ 3.5A, 4.5V ±12V 480pF @ 10V 14.5nC @ 10V 20V SOT-23-6 Thin, TSOT-23-6
SI3879DV-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 480pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 70mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
SI3879DV-T1-E3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 70mOhm
a 20V drain to source voltage (Vdss)
SI3879DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3879DV-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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