SI3853DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

830mW Ta

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Form :

Gull wing

Power Dissipation :

830mW

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.6A

Series :

LITTLE FOOT®

Vgs (Max) :

±12V

Pin Count :

6

Drain-source On Resistance-Max :

0.2Ohm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

500mV @ 250μA (Min)

JESD-30 Code :

R-PDSO-G6

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.8A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Terminal Position :

Dual

Published :

2013

FET Feature :

Schottky Diode (Isolated)

Terminal Finish :

PURE MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

FET Type :

P-Channel

Number of Elements :

1

Number of Terminations :

6