SI3851DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G6

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.6A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Series :

LITTLE FOOT®

Number of Elements :

1

Factory Lead Time :

21 Weeks

Number of Terminations :

6

Power Dissipation-Max :

830mW Ta

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.2Ohm

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation :

830mW

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 5V

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Published :

2016

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

12 ns

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE