SI3812DV-T1-E3
- Mfr.Part #
- SI3812DV-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2A 6TSOP
- Stock
- 46,886
- In Stock :
- 46,886
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Series :
- LITTLE FOOT®
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 10 ns
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 830mW
- Drain to Source Resistance :
- 125mOhm
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Rds On Max :
- 125 mΩ
- Height :
- 1mm
- FET Feature :
- Schottky Diode (Isolated)
- Gate to Source Voltage (Vgs) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 14 ns
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Number of Pins :
- 6
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Width :
- 1.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Supplier Device Package :
- 6-TSOP
- Continuous Drain Current (ID) :
- 2.4A
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 2.4A, 4.5V
- Number of Channels :
- 1
- Power Dissipation-Max :
- 830mW Ta
- Published :
- 2011
- Weight :
- 19.986414mg
- Drain to Source Voltage (Vdss) :
- 20V
- Fall Time (Typ) :
- 30 ns
- Vgs (Max) :
- ±12V
- Length :
- 3.05mm
- Rise Time :
- 30ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SI3812DV-T1-E3
N-Channel Tape & Reel (TR) 125mOhm @ 2.4A, 4.5V ±12V 4nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
SI3812DV-T1-E3 Overview
Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 125mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI3812DV-T1-E3 Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 125mOhm
a 20V drain to source voltage (Vdss)
SI3812DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3812DV-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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