SI3812DV-T1-E3

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Mfr.Part #
SI3812DV-T1-E3
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 20V 2A 6TSOP
Stock
46,886
In Stock :
46,886

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2A Ta
Min Operating Temperature :
-55°C
Mount :
Surface Mount
Series :
LITTLE FOOT®
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
10 ns
Mounting Type :
Surface Mount
Power Dissipation :
830mW
Drain to Source Resistance :
125mOhm
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Rds On Max :
125 mΩ
Height :
1mm
FET Feature :
Schottky Diode (Isolated)
Gate to Source Voltage (Vgs) :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
14 ns
Max Operating Temperature :
150°C
FET Type :
N-Channel
Number of Pins :
6
Vgs(th) (Max) @ Id :
600mV @ 250μA (Min)
Width :
1.65mm
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Supplier Device Package :
6-TSOP
Continuous Drain Current (ID) :
2.4A
Drain to Source Breakdown Voltage :
20V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
125mOhm @ 2.4A, 4.5V
Number of Channels :
1
Power Dissipation-Max :
830mW Ta
Published :
2011
Weight :
19.986414mg
Drain to Source Voltage (Vdss) :
20V
Fall Time (Typ) :
30 ns
Vgs (Max) :
±12V
Length :
3.05mm
Rise Time :
30ns
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Packaging :
Tape and Reel (TR)
Datasheets
SI3812DV-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI3812DV-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, SI3812DV-T1-E3 pinout, SI3812DV-T1-E3 datasheet PDF, SI3812DV-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI3812DV-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI3812DV-T1-E3


N-Channel Tape & Reel (TR) 125mOhm @ 2.4A, 4.5V ±12V 4nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6

SI3812DV-T1-E3 Overview


Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 125mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.

SI3812DV-T1-E3 Features


a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 125mOhm
a 20V drain to source voltage (Vdss)


SI3812DV-T1-E3 Applications


There are a lot of Vishay Siliconix
SI3812DV-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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