SI3853DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

34 ns

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±12V

Power Dissipation :

830mW

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.8A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

FET Feature :

Schottky Diode (Isolated)

Terminal Form :

Gull wing

Threshold Voltage :

-500mV

Number of Terminations :

6

Series :

LITTLE FOOT®

Number of Elements :

1

Drain-source On Resistance-Max :

0.2Ohm

Vgs(th) (Max) @ Id :

500mV @ 250μA (Min)

Power Dissipation-Max :

830mW Ta

REACH SVHC :

Unknown

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Turn On Delay Time :

11 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Nominal Vgs :

-500 mV

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

1.6A

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Rise Time :

34ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V