SI3850ADV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain-source On Resistance-Max :

0.41Ohm

Threshold Voltage :

1.5V

FET Type :

N and P-Channel, Common Drain

Rds On (Max) @ Id, Vgs :

300m Ω @ 500mA, 4.5V

Radiation Hardening :

No

Terminal Finish :

PURE MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.4A

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

1.06W

Current - Continuous Drain (Id) @ 25°C :

1.4A 960mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Number of Terminations :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

Pbfree Code :

yes

REACH SVHC :

Unknown

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Base Part Number :

SI3850

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Max Power Dissipation :

1.08W