SI3850ADV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Number of Terminations :

6

Terminal Position :

Dual

Fall Time (Typ) :

34 ns

Base Part Number :

SI3850

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®

Threshold Voltage :

1.5V

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Power Dissipation :

1.08W

Max Power Dissipation :

1.08W

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Published :

2016

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Pin Count :

6

Resistance :

640mOhm

Continuous Drain Current (ID) :

1.4A

Rise Time :

34ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

300m Ω @ 500mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.4A 960mA

Mounting Type :

Surface Mount

FET Type :

N and P-Channel, Common Drain

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Nominal Vgs :

1.5 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

18 ns

Lead Free :

Lead Free

Pbfree Code :

yes