SI3805DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-3.3A

Drain Current-Max (Abs) (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.1W Ta 1.4W Tc

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

40 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

6

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Length :

3.05mm

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Height :

1mm

Rise Time :

40ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn-Off Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

84m Ω @ 3A, 10V

JESD-609 Code :

e3

Weight :

19.986414mg

Power Dissipation :

1.1W

Mount :

Surface Mount

Series :

LITTLE FOOT®

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Schottky Diode (Isolated)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

ECCN Code :

EAR99

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Width :

1.65mm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

FET Type :

P-Channel

Number of Channels :

1

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.084Ohm