SI3867DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Power Dissipation :

1.1W

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Fall Time (Typ) :

31 ns

Pin Count :

6

Turn On Delay Time :

17 ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Resistance :

51mOhm

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Pbfree Code :

yes

Element Configuration :

Single

Published :

2013

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Radiation Hardening :

No

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Rise Time :

31ns

Power Dissipation-Max :

1.1W Ta

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Threshold Voltage :

-1.4V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

3.9A

JESD-609 Code :

e3

Vgs (Max) :

±12V

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

51m Ω @ 5.1A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-5.1A