SI1563EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Resistance :

490mOhm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Nominal Vgs :

450 mV

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.13A 880mA

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Power Dissipation :

570mW

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Elements :

2

Pin Count :

6

Fall Time (Typ) :

850 ns

Base Part Number :

SI1563

Mounting Type :

Surface Mount

Voltage :

20V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Rise Time :

480ns

Transistor Element Material :

SILICON

Number of Terminations :

6

Turn-Off Delay Time :

840 ns

Mount :

Surface Mount

Max Power Dissipation :

570mW

Published :

2005

Current :

1A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

1.13A

Terminal Finish :

MATTE TIN

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 100µA

Lead Free :

Lead Free

Threshold Voltage :

1V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Radiation Hardening :

No

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Additional Feature :

ESD Protection