RSQ030P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Transistor Element Material :

SILICON

Voltage - Rated DC :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Contact Plating :

Copper, Silver, Tin

Transistor Application :

SWITCHING

Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN/TIN COPPER

ECCN Code :

EAR99

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

10

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Turn-Off Delay Time :

40 ns

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 10V

Rise Time :

13ns

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-30V

Pbfree Code :

yes

Published :

2003

Radiation Hardening :

No

Current Rating :

-30A

Lead Free :

Lead Free

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Resistance :

80mOhm

Pin Count :

6

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 10V

Drain Current-Max (Abs) (ID) :

3A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e3/e2

Threshold Voltage :

-2.5V

Turn On Delay Time :

10 ns

Power Dissipation-Max :

1.25W Ta

Fall Time (Typ) :

13 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Form :

Gull wing