RSQ015P10TR
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- Mfr.Part #
- RSQ015P10TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 1.5A TSMT6
- Stock
- 266
- In Stock ：
- 266
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Number of Terminations :
- 6
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Turn On Delay Time :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 6
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 25V
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 470m Ω @ 1.5A, 10V
- Drain-source On Resistance-Max :
- 0.47Ohm
- DS Breakdown Voltage-Min :
- 100V
- Continuous Drain Current (ID) :
- 1.5A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 600mW Ta
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 6A
- Turn-Off Delay Time :
- 60 ns
- Published :
- 2012
- Rise Time :
- 15ns
- Radiation Hardening :
- No
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- P-Channel
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Datasheets
- RSQ015P10TR
P-Channel Tape & Reel (TR) 470m Ω @ 1.5A, 10V ±20V 950pF @ 25V 17nC @ 5V 100V SOT-23-6 Thin, TSOT-23-6
RSQ015P10TR Overview
A device's maximum input capacitance is 950pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 6A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
RSQ015P10TR Features
a continuous drain current (ID) of 1.5A
the turn-off delay time is 60 ns
based on its rated peak drain current 6A.
a 100V drain to source voltage (Vdss)
RSQ015P10TR Applications
There are a lot of ROHM Semiconductor
RSQ015P10TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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